MMBT3906T pnp silicon general purpose transistors elektronische bauelemente 12-apr-2010 rev. a page 1 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? simplifies circuit design. ? we declare that the material of product compliance with rohs requirements. ordering information device marking shipping MMBT3906T 2a 3000/tape&reel maximum ratings (at t a = 25 c unless otherwise specified) parameter symbol ratings unit collector - emitter voltage v ceo -40 vdc collector - base voltage v cbo -40 vdc emitter - base voltage v ebo -5.0 vdc collector current - continuous i c -200 madc total device dissapation fr-4 board (1) t a =25 , derate above 25 p d 200 mw 1.6 mw/ thermal resistance, junction to ambient r ja 600 / w total device dissapation fr-4 board (2) t a =25 , derate above 25 p d 300 mw 2.4 mw/ thermal resistance, junction to ambient r ja 400 / w junction & storage temperature t j , t stg -55 ~ 150 1. fr-4 minimum pad. 2. fr-4 1.0 x 1.0 inch pad. 3. pulse test pulse width 300 Q s, duty cycle 2.0 Q . device marking MMBT3906T = 2a so t -523 ref. millimete r ref. millimete r min. max. min. max. a 1.50 1.70 k 0.30 0.50 b 0.75 0.95 m --- 10 o c 0.60 0.80 n --- 10 o d 0.23 0.33 s 1.50 1.70 g 0.50bsc j 0.10 0.20
MMBT3906T pnp silicon general purpose transistors elektronische bauelemente 12-apr-2010 rev. a page 2 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (at t a = 25 c unless otherwise specified) characteristic symbol min. max. unit test conditions off characteristics collector-emitter breakdown voltage (3) v (br)ceo -40 - vdc i c = -1.0 madc, i b = 0 collector-base breakdown voltage v (br)cbo -40 - vdc i c = -10 adc, i e = 0 emitter-base breakdown voltage v (br)ebo -5.0 - vdc i e = -10 adc, i c = 0 collector cut-off current i bl - -50 nadc v ce = -30 vdc, v eb = -3.0 vdc emitter cut-off current i ce x - -50 nadc v ce = -30 vdc, v be = -3.0 vdc on characteristics (3) dc current gain (1) h fe 60 - - i c = -0.1 madc, v ce = -1.0 vdc 80 - i c = -1.0 madc, v ce = -1.0 vdc 100 300 i c = -10 madc, v ce = -1.0 vdc 60 - i c = -50 madc, v ce = -1.0 vdc 30 - i c = -100 madc, v ce = -1.0 vdc collector-emitter sa turation voltage (3) v ce(sat) - -0.25 vdc i c = -10 madc, i b = -1.0 madc --0.4 i c = -50 madc, i b = -5.0 madc base-emitter satu ration voltage (3) v be(sat) -0.65 -0.85 vdc i c = -10 madc, i b = -1.0 madc - -0.95 i c = -50 madc, i b = -5.0 madc small-signal characteristics curren-gain-bandwidth product f t 250 - mhz v ce = -20 vdc, i c = -10 madc, f = 100 mhz output capacitance c obo -4.5pfv cb = -5.0 vdc, i e = 0, f = 1.0 mhz input capacitance c ibo -10pfv be = -0.5 vdc, i e = 0, f = 1.0 mhz input impedancen h ie 2.0 12 pf v ce = -10 vdc, i c = -1.0 madc, f = 1.0 khz voltage feedback ratio h re 0.1 10 x10 -4 v ce = -10 vdc, i c = -1.0 madc, f = 1.0 khz small-signal current gain h fe 100 400 - v ce = -10 vdc, i c = -1.0 madc, f = 1.0 khz output admittance *h oe 3.0 60 mhos v ce = -10 vdc, i c = -1.0 madc, f = 1.0 khz noise figure nf - 4.0 db v ce = -5.0 vdc, i c = -100 adc, r s = 1.0k ??? f = 1.0 khz switching characteristics delay time t d - 35 ns v cc = -3.0 vdc, v be = 0.5 vdc, i c = -10 madc, i b1 = -1.0 madc rise time t r - 35 ns storage time t s - 225 ns v cc = -3.0 vdc, i c = -10 madc, i b1 = i b2 = -1.0 madc fall time t f - 75 ns 3. pulse test pulse width Q 300 s, duty cycle Q 2.0%.
MMBT3906T pnp silicon general purpose transistors elektronische bauelemente 12-apr-2010 rev. a page 3 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
MMBT3906T pnp silicon general purpose transistors elektronische bauelemente 12-apr-2010 rev. a page 4 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
MMBT3906T pnp silicon general purpose transistors elektronische bauelemente 12-apr-2010 rev. a page 5 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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